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STD1HN60K3 - MFG_DPAK(TO252-3)

STD1HN60K3

Active
STMicroelectronics

N-CHANNEL 600 V, 6.4 OHM TYP., 1.2 A, SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE

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Search across all available documentation for this part.

DocumentsTN1156+16
STD1HN60K3 - MFG_DPAK(TO252-3)

STD1HN60K3

Active
STMicroelectronics

N-CHANNEL 600 V, 6.4 OHM TYP., 1.2 A, SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsTN1156+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD1HN60K3
Current - Continuous Drain (Id) @ 25°C1.2 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]9.5 nC
Input Capacitance (Ciss) (Max) @ Vds140 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)27 W
Rds On (Max) @ Id, Vgs8 Ohm
Supplier Device PackageDPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.53
10$ 1.25
100$ 0.97
500$ 0.82
1000$ 0.67
Digi-Reel® 1$ 1.53
10$ 1.25
100$ 0.97
500$ 0.82
1000$ 0.67
Tape & Reel (TR) 2500$ 0.57
TMEN/A 1$ 0.89
10$ 0.64
100$ 0.53
500$ 0.48

Description

General part information

STD1HN60K3 Series

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.