STD1HN60K3 Series

N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package

Catalog

N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package
STMicroelectronics STD1HN60K3	10 V	27 W	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	30 V	8 Ohm	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	1.2 A	9.5 nC	140 pF	600 V	N-Channel	DPAK

Catalog

N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.