SPU02N60C3BKMA1

Obsolete

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 1.8 A, 2.7 OHM, TO-251, THROUGH HOLE

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Obsolete

Infineon Technologies

POWER MOSFET, N CHANNEL, 650 V, 1.8 A, 2.7 OHM, TO-251, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	SPU02N60C3BKMA1

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12.5 nC
Input Capacitance (Ciss) (Max) @ Vds	200 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-TO251-3-21
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Technology
Infineon Technologies SPU02N60C3BKMA1	200 pF	12.5 nC	IPAK TO-251-3 Short Leads TO-251AA	25 W	10 V	3 Ohm	PG-TO251-3-21	650 V	N-Channel	3.9 V	Through Hole	20 V	-55 °C	150 °C	1.8 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 1.8A (Tc) 25W (Tc) Through Hole PG-TO251-3-21

Technical documentation and resources

No documents available