Beta
⌘K
POWER MOSFET, N CHANNEL, 650 V, 1.8 A, 2.7 OHM, TO-251, THROUGH HOLE
| Part | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 200 pF | 12.5 nC | IPAK TO-251-3 Short Leads TO-251AA | 25 W | 10 V | 3 Ohm | PG-TO251-3-21 | 650 V | N-Channel | 3.9 V | Through Hole | 20 V | -55 °C | 150 °C | 1.8 A | MOSFET (Metal Oxide) |