FF6MR12W2M1HB11BPSA1

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Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 145 A, 1.2 KV, 0.0054 OHM, MODULE

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Infineon Technologies

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 145 A, 1.2 KV, 0.0054 OHM, MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	FF6MR12W2M1HB11BPSA1

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	145 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	446 nC
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Rds On (Max) @ Id, Vgs	5.4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.15 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies FF6MR12KM1PHOSA1	250 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-62MM	5.81 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.15 V
Infineon Technologies FF6MR12W2M1PB11BPSA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module		5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Dual)	5.55 V
Infineon Technologies FF6MR12KM1BOSA1	250 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-62MM	5.81 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.15 V
Infineon Technologies FF6MR12W2M1B11BOMA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-EASY2BM-2	5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Dual)	5.55 V
Infineon Technologies FF6MR12W2M1B70BPSA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-EASY2B	5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.55 V
Infineon Technologies FF6MR12W2M1HB11BPSA1	145 A	1200 V	1.2 kV	Silicon Carbide (SiC)	175 °C	-40 C	Module	Module	5.4 mOhm	Chassis Mount		2 N-Channel (Half Bridge)	5.15 V	446 nC

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General part information

EasyDUAL™ 2BCoolSiC™ MOSFEThalf-bridge module 1200 V, 6 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.

Technical documentation and resources

No documents available