FF6MR12W2M1PB11BPSA1

Obsolete

Infineon Technologies

SILICON CARBIDE POWER MOSFET

Search across all available documentation for this part.

Obsolete

Infineon Technologies

SILICON CARBIDE POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	FF6MR12W2M1PB11BPSA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Input Capacitance (Ciss) (Max) @ Vds	14700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	5.63 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5.55 V

Part	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Configuration	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies FF6MR12KM1PHOSA1	250 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-62MM	5.81 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.15 V
Infineon Technologies FF6MR12W2M1PB11BPSA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module		5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Dual)	5.55 V
Infineon Technologies FF6MR12KM1BOSA1	250 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-62MM	5.81 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.15 V
Infineon Technologies FF6MR12W2M1B11BOMA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-EASY2BM-2	5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Dual)	5.55 V
Infineon Technologies FF6MR12W2M1B70BPSA1	200 A	1200 V	1.2 kV	Silicon Carbide (SiC)	150 °C	-40 °C	Module	AG-EASY2B	5.63 mOhm	Chassis Mount	14700 pF	2 N-Channel (Half Bridge)	5.55 V
Infineon Technologies FF6MR12W2M1HB11BPSA1	145 A	1200 V	1.2 kV	Silicon Carbide (SiC)	175 °C	-40 C	Module	Module	5.4 mOhm	Chassis Mount		2 N-Channel (Half Bridge)	5.15 V	446 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 200A (Tj) Chassis Mount

Technical documentation and resources

No documents available