TK100E06N1,S1X

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Toshiba Semiconductor and Storage

MOSFET N CH 60V 100A TO-220

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Toshiba Semiconductor and Storage

MOSFET N CH 60V 100A TO-220

Technical Specifications

Parameters and characteristics for this part

Specification	TK100E06N1,S1X

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	10500 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	255 W
Rds On (Max) @ Id, Vgs	2.3 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Supplier Device Package
Toshiba Semiconductor and Storage TK100E06N1,S1X	10 V	10500 pF	Through Hole	100 A	TO-220-3	255 W	60 V	20 V	MOSFET (Metal Oxide)	N-Channel	140 nC	150 °C	2.3 mOhm	TO-220

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General part information

N-Channel 60 V 100A (Ta) 255W (Tc) Through Hole TO-220

Technical documentation and resources