Beta
⌘K
MOSFET N CH 60V 100A TO-220
| Part | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Rds On (Max) @ Id, Vgs | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 10 V | 10500 pF | Through Hole | 100 A | TO-220-3 | 255 W | 60 V | 20 V | MOSFET (Metal Oxide) | N-Channel | 140 nC | 150 °C | 2.3 mOhm | TO-220 |