STN0214

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STMicroelectronics

VERY HIGH VOLTAGE NPN POWER TRANSISTOR

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STMicroelectronics

VERY HIGH VOLTAGE NPN POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	STN0214

Current - Collector (Ic) (Max) [Max]	200 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	3
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1.6 W
Supplier Device Package	SOT-223
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Very high voltage NPN power transistor

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Transistor Type	Mounting Type	Operating Temperature	Package / Case
STMicroelectronics STN0214	1.6 W	10 µA	1200 V	300 mV	200 mA	3	SOT-223	NPN	Surface Mount	150 °C	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology.

Technical documentation and resources