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Very high voltage NPN power transistor
Description
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The device is an NPN power bipolar transistor manufactured using the latest high-voltage diffused collector technology.
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Very high voltage NPN power transistor
Very high voltage NPN power transistor
| Part | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Transistor Type | Mounting Type | Operating Temperature | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 1.6 W | 10 µA | 1200 V | 300 mV | 200 mA | 3 | SOT-223 | NPN | Surface Mount | 150 °C | TO-261-4 TO-261AA |