STGF10NC60HD

Obsolete

STMicroelectronics

IGBT 600V 9A 24W TO220FP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

STGF10NC60HD

Obsolete

STMicroelectronics

IGBT 600V 9A 24W TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGF10NC60HD

Current - Collector (Ic) (Max) [Max]	9 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	19.2 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	24 W
Reverse Recovery Time (trr)	22 ns
Supplier Device Package	TO-220FP
Switching Energy	95 µJ, 31.8 µJ
Td (on/off) @ 25°C	14.2 ns, 72 ns
Test Condition	15 V, 10 Ohm, 5 A, 390 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGF10M65DF2 Series

Trench gate field-stop IGBT, H series 600 V, 10 A high speed

Part	IGBT Type	Current - Collector (Ic) (Max)	Switching Energy	Current - Collector Pulsed (Icm)	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Mounting Type	Gate Charge	Reverse Recovery Time (trr)	Test Condition	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)
STMicroelectronics STGF10H60DF	Trench Field Stop	20 A	83 µJ 140 µJ	40 A	600 V	30 W	1.95 V	TO-220FP	Through Hole	57 nC	107 ns	10 A 10 Ohm 15 V 400 V	TO-220-3 Full Pack	-55 °C	175 ░C
STMicroelectronics STGF10NC60HD			31.8 µJ 95 µJ	30 A	600 V	24 W	2.5 V	TO-220FP	Through Hole	19.2 nC	22 ns	5 A 10 Ohm 15 V 390 V	TO-220-3 Full Pack	-55 °C	150 °C	14.2 ns 72 ns	9 A
STMicroelectronics STGF10M65DF2	Trench Field Stop	20 A	120 µJ 270 µJ	40 A		30 W	2 V	TO-220FP	Through Hole	28 nC	96 ns	10 A 15 V 22 Ohm 400 V	TO-220-3 Full Pack	-55 °C	175 ░C	19 ns 91 ns		650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGF10M65DF2 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Documents

Technical documentation and resources