Technical Specifications
Parameters and characteristics for this part
| Specification | STGF10M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) | 20 A |
| Current - Collector Pulsed (Icm) | 40 A |
| Gate Charge | 28 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power - Max [Max] | 30 W |
| Reverse Recovery Time (trr) | 96 ns |
| Supplier Device Package | TO-220FP |
| Switching Energy | 270 µJ, 120 µJ |
| Td (on/off) @ 25°C | 19 ns, 91 ns |
| Test Condition | 400 V, 22 Ohm, 15 V, 10 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.83 | |
| 50 | $ 0.87 | |||
| 100 | $ 0.78 | |||
| 500 | $ 0.62 | |||
| 1000 | $ 0.56 | |||
| 2000 | $ 0.52 | |||
| 5000 | $ 0.47 | |||
| 10000 | $ 0.46 | |||
Description
General part information
STGF10M65DF2 Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.