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STL3N10F7 - 6-WDFN Exposed Pad

STL3N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.062 OHM TYP., 4 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 2X2 PACKAGE

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Search across all available documentation for this part.

DocumentsAN4789+14
STL3N10F7 - 6-WDFN Exposed Pad

STL3N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.062 OHM TYP., 4 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 2X2 PACKAGE

Deep-Dive with AI

DocumentsAN4789+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL3N10F7
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]7.8 nC
Input Capacitance (Ciss) (Max) @ Vds408 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerWDFN
Power Dissipation (Max)2.4 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackagePowerFlat™ (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.62
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Digi-Reel® 1$ 0.62
10$ 0.54
100$ 0.38
500$ 0.31
1000$ 0.27
Tape & Reel (TR) 3000$ 0.24
6000$ 0.22
9000$ 0.21
30000$ 0.21

Description

General part information

STL3N10F7 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.