STL3N10F7 Series

N-channel 800 V, 2.8 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Catalog

N-channel 800 V, 2.8 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Part	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
STMicroelectronics STL3N10F7	6-PowerWDFN	100 V	PowerFlat™ (2x2)	408 pF	4 A	N-Channel	10 V	MOSFET (Metal Oxide)	20 V	4.5 V	7.8 nC	70 mOhm	Surface Mount	-55 °C	150 °C	2.4 W
STMicroelectronics STL3N80K5

Catalog

N-channel 800 V, 2.8 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.