SSM3K131TU,LF

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A UFM

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Toshiba Semiconductor and Storage

MOSFET N-CH 30V 6A UFM

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K131TU,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.1 nC
Input Capacitance (Ciss) (Max) @ Vds	450 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	27.6 mOhm
Supplier Device Package	UFM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	FET Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max) [Max]
Toshiba Semiconductor and Storage SSM3K131TU,LF	450 pF	27.6 mOhm	6 A	10.1 nC	UFM	30 V	150 °C	N-Channel	MOSFET (Metal Oxide)	20 V	4.5 V 10 V	Surface Mount	2.5 V	500 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 6A (Ta) 500mW (Ta) Surface Mount UFM

Technical documentation and resources