MOSFET N-CH 30V 6A UFM
| Part | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature | FET Type | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 450 pF | 27.6 mOhm | 6 A | 10.1 nC | UFM | 30 V | 150 °C | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.5 V 10 V | Surface Mount | 2.5 V | 500 mW |