IR2102STRPBF

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Infineon Technologies

DRIVER 600V 2-OUT HIGH SIDE/LOW SIDE INV/NON-INV 8-PIN SOIC N T/R

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Infineon Technologies

DRIVER 600V 2-OUT HIGH SIDE/LOW SIDE INV/NON-INV 8-PIN SOIC N T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IR2102STRPBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	360 mA
Current - Peak Output (Source, Sink) [custom]	210 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Logic Voltage - VIL, VIH	0.8 V, 3 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	50 ns
Rise / Fall Time (Typ) [custom]	100 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	Number of Drivers	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2102PBF	Inverting	600 V	Through Hole	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-PDIP	50 ns	100 ns	0.3 in	8-DIP	7.62 mm	2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET
Infineon Technologies IR2102PBF	Inverting	600 V	Through Hole	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-PDIP	50 ns	100 ns	0.3 in	8-DIP	7.62 mm	2	Independent	20 V	10 VDC	IGBT MOSFET N-Channel MOSFET
Infineon Technologies IR2102STR	Inverting	600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in
Infineon Technologies IR2102S	Inverting	600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in
Infineon Technologies IR2102STRPBF		600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in

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General part information

Half-Bridge Gate Driver IC 8-SOIC

Technical documentation and resources

No documents available