IR2102 Series

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Input Type	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Driven Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case	Package / Case	Number of Drivers	Channel Type	Voltage - Supply [Max]	Voltage - Supply [Min]	Gate Type	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2102PBF	Inverting	600 V	Through Hole	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-PDIP	50 ns	100 ns	0.3 in	8-DIP	7.62 mm	2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET
Infineon Technologies IR2102PBF	Inverting	600 V	Through Hole	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-PDIP	50 ns	100 ns	0.3 in	8-DIP	7.62 mm	2	Independent	20 V	10 VDC	IGBT MOSFET N-Channel MOSFET
Infineon Technologies IR2102STR	Inverting	600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in
Infineon Technologies IR2102S	Inverting	600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in
Infineon Technologies IR2102STRPBF		600 V	Surface Mount	Half-Bridge	150 °C	-40 °C	0.8 V 3 V	360 mA	210 mA	8-SOIC	50 ns	100 ns		8-SOIC		2	Independent	20 V	10 VDC	IGBT N-Channel MOSFET	3.9 mm	0.154 in