IRF7205TRPBF

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Infineon Technologies

MOSFET, P-CH, 30V, 4.6A, SOIC ROHS COMPLIANT: YES

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Infineon Technologies

MOSFET, P-CH, 30V, 4.6A, SOIC ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7205TRPBF

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)
Infineon Technologies IRF7205TRPBF	MOSFET (Metal Oxide)	2.5 W	-55 °C	150 °C	Surface Mount	P-Channel	40 nC	3 V	8-SO	870 pF	8-SOIC	3.9 mm	0.154 in	30 V	4.6 A	4.5 V 10 V	70 mOhm	20 V

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