MOSFET, P-CH, 30V, 4.6A, SOIC ROHS COMPLIANT: YES
| Part | Technology | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 2.5 W | -55 °C | 150 °C | Surface Mount | P-Channel | 40 nC | 3 V | 8-SO | 870 pF | 8-SOIC | 3.9 mm | 0.154 in | 30 V | 4.6 A | 4.5 V 10 V | 70 mOhm | 20 V |