DMP2005UFG-7

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Diodes Inc

TRANS MOSFET P-CH 20V 19A 8-PIN POWERDI EP T/R

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DMP2005UFG-7

Active

Diodes Inc

TRANS MOSFET P-CH 20V 19A 8-PIN POWERDI EP T/R

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2005UFG-7

Current - Continuous Drain (Id) @ 25°C	89 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	125 nC
Input Capacitance (Ciss) (Max) @ Vds	4670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.2 W
Rds On (Max) @ Id, Vgs	4 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	900 mV

DMP2005UFG Series

20V P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMP2005UFG-7	125 nC	4 mOhm	2.2 W	20 V	Surface Mount	8-PowerVDFN	4670 pF	P-Channel	1.8 V 4.5 V	10 V	-55 °C	150 °C	900 mV	MOSFET (Metal Oxide)	POWERDI3333-8	89 A
Diodes Inc DMP2005UFG-13	125 nC	4 mOhm	2.2 W	20 V	Surface Mount	8-PowerVDFN	4670 pF	P-Channel	1.8 V 4.5 V	10 V	-55 °C	150 °C	900 mV	MOSFET (Metal Oxide)	POWERDI3333-8	89 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2000	$ 0.33
		4000	$ 0.31
		6000	$ 0.29
		10000	$ 0.28

Description

General part information

DMP2005UFG Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.