DMP2005UFG Series

20V P-Channel Enhancement Mode MOSFET

Catalog

20V P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMP2005UFG-7	125 nC	4 mOhm	2.2 W	20 V	Surface Mount	8-PowerVDFN	4670 pF	P-Channel	1.8 V 4.5 V	10 V	-55 °C	150 °C	900 mV	MOSFET (Metal Oxide)	POWERDI3333-8	89 A
Diodes Inc DMP2005UFG-13	125 nC	4 mOhm	2.2 W	20 V	Surface Mount	8-PowerVDFN	4670 pF	P-Channel	1.8 V 4.5 V	10 V	-55 °C	150 °C	900 mV	MOSFET (Metal Oxide)	POWERDI3333-8	89 A

Catalog

20V P-Channel Enhancement Mode MOSFET

Key Features

• Low RDS(ON)– ensures on state losses are minimized

• Small form factor, thermally efficient package enables higher density end products

• Occupies just 33% of the board area occupied by SO-8 enabling smaller end product

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.