BSL316CL6327HTSA1

Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 1.4A TSOP6-6

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Obsolete

Infineon Technologies

MOSFET N/P-CH 30V 1.4A TSOP6-6

Technical Specifications

Parameters and characteristics for this part

Specification	BSL316CL6327HTSA1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	1.5 A, 1.4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.6 nC
Input Capacitance (Ciss) (Max) @ Vds	94 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TSOP6-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Package / Case	FET Feature	Configuration	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Grade
Infineon Technologies BSL316CL6327HTSA1	SOT-23-6 Thin TSOT-23-6	Logic Level Gate	N and P-Channel	Surface Mount	PG-TSOP6-6	-55 °C	150 °C	0.6 nC	30 V	1.4 A 1.5 A	2 V	94 pF	MOSFET (Metal Oxide)	500 mW	160 mOhm
Infineon Technologies BSL316CH6327XTSA1	SOT-23-6 Thin TSOT-23-6	4.5V Drive Logic Level Gate	N and P-Channel Complementary	Surface Mount	PG-TSOP6-6	-55 °C	150 °C	0.6 nC	30 V	1.4 A 1.5 A	2 V		MOSFET (Metal Oxide)	500 mW	160 mOhm	AEC-Q101	282 pF	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 1.4A, 1.5A 500mW Surface Mount PG-TSOP6-6

Technical documentation and resources

No documents available