MOSFET N/P-CH 30V 1.4A TSOP6-6
| Part | Package / Case | FET Feature | Configuration | Mounting Type | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Qualification | Input Capacitance (Ciss) (Max) @ Vds [Max] | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SOT-23-6 Thin TSOT-23-6 | Logic Level Gate | N and P-Channel | Surface Mount | PG-TSOP6-6 | -55 °C | 150 °C | 0.6 nC | 30 V | 1.4 A 1.5 A | 2 V | 94 pF | MOSFET (Metal Oxide) | 500 mW | 160 mOhm | |||
Infineon Technologies | SOT-23-6 Thin TSOT-23-6 | 4.5V Drive Logic Level Gate | N and P-Channel Complementary | Surface Mount | PG-TSOP6-6 | -55 °C | 150 °C | 0.6 nC | 30 V | 1.4 A 1.5 A | 2 V | MOSFET (Metal Oxide) | 500 mW | 160 mOhm | AEC-Q101 | 282 pF | Automotive |