
PSMN013-80YS,115
ActiveNexperia USA Inc.
N-CHANNEL LFPAK 80 V 12.9 MΩ STANDARD LEVEL MOSFET

PSMN013-80YS,115
ActiveNexperia USA Inc.
N-CHANNEL LFPAK 80 V 12.9 MΩ STANDARD LEVEL MOSFET
Description
General part information
PSMN013 Series
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN013-80YS,115 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 37 nC, 37 nC |
| Input Capacitance (Ciss) (Max) | 2420 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 106 W |
| Rds On (Max) | 12.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Power MOSFET single-shot and repetitive avalanche ruggedness rating
Using power MOSFETs in parallel
LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation
plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body
Using Power MOSFET Zth Curves
PSMN013-80YS Quality document
Nexperia package poster
Power MOSFET frequently asked questions and answers
Failure signature of Electrical Overstress on Power MOSFETs
plastic, single-ended surface-mounted package; 4 terminals
Questions about package outline drawings
Reflow soldering profile
Wave soldering profile
Understanding power MOSFET data sheet parameters
Understanding power MOSFET data sheet parameters
RC Thermal Models
Designing RC Snubbers
LFPAK MOSFET thermal design guide - Part 2
LFPAK MOSFET thermal design guide, Chinese version