PSMN013 Series

N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Catalog

N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Part	Technology	Gate Charge (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	FET Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Power - Max (Ta)	Current - Continuous Drain (Id) (Ta)	Channel Count	Configuration	Configuration - Features	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Nexperia USA Inc. PSMN013-100BS,118	MOSFET (Metal Oxide)	59 nC	4 V	3195 pF 3195 pF	100 V	13.9 mOhm	N-Channel	D2PAK	-55 °C	175 °C	68 A	Surface Mount	170 W	10 V	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Nexperia USA Inc. PSMN013-60HSX	MOSFET (Metal Oxide)	30.1 nC	4 V	2163 pF	60 V	10 mOhm		LFPAK56D	-55 °C	175 °C		Surface Mount				8-LFPAK56 SOT-1205	64 W	40 A	2	N-Channel	Dual
Nexperia USA Inc. PSMN013-60HLX	MOSFET (Metal Oxide)	22.4 nC 22.4 nC	2.1 V	2953 pF	60 V	12.5 mOhm		LFPAK56D	-55 °C	175 °C		Surface Mount				8-LFPAK56 SOT-1205	64 W	40 A	2	N-Channel	Dual
Nexperia USA Inc. PSMN013-80YS,115	MOSFET (Metal Oxide)	37 nC 37 nC	4 V	2420 pF	80 V	12.9 mOhm	N-Channel	LFPAK56 Power-SO8	-55 °C	175 °C	60 A	Surface Mount	106 W	10 V	20 V	SC-100 SOT-669
Nexperia USA Inc. PSMN013-30YLC,115	MOSFET (Metal Oxide)	8.3 nC	1.95 V	521 pF	30 V	13.6 mOhm	N-Channel	LFPAK56 Power-SO8	-55 °C	175 °C	32 A	Surface Mount	26 W	10 V	20 V	SC-100 SOT-669
Nexperia USA Inc. PSMN013-30MLC,115	MOSFET (Metal Oxide)	8 nC	1.95 V	519 pF	30 V	13.6 mOhm	N-Channel	LFPAK33	-55 °C	175 °C	39 A	Surface Mount	38 W		20 V	8-LFPAK33 (5-Lead) SOT-1210						10 V	4.5 V
Nexperia USA Inc. PSMN013-100PS,127	MOSFET (Metal Oxide)	59 nC	4 V	3195 pF 3195 pF	100 V	13.9 mOhm	N-Channel	TO-220AB	-55 °C	175 °C	68 A	Through Hole	170 W	10 V	20 V	TO-220-3

Catalog

N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.