SSM6L11TU(TE85L,F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.5A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L11TU(TE85L,F)

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	268 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs [Max]	145 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.1 V

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Feature	Power - Max [Max]	Configuration	Operating Temperature	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Vgs(th) (Max) @ Id
Toshiba Semiconductor and Storage SSM6L11TU(TE85L,F)	20 V	145 mOhm	6-SMD Flat Leads	500 mA	Logic Level Gate	500 mW	N and P-Channel	150 °C	Surface Mount	268 pF	UF6	MOSFET (Metal Oxide)	1.1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 500mA 500mW Surface Mount UF6

Technical documentation and resources

No documents available