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MOSFET N/P-CH 20V 0.5A UF6
| Part | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Feature | Power - Max [Max] | Configuration | Operating Temperature | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 145 mOhm | 6-SMD Flat Leads | 500 mA | Logic Level Gate | 500 mW | N and P-Channel | 150 °C | Surface Mount | 268 pF | UF6 | MOSFET (Metal Oxide) | 1.1 V |