IR2108STRPBF

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Infineon Technologies

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.2 A SOURCE AND 0.35 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION

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IR2108STRPBF

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Infineon Technologies

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IR2108STRPBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.9 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

IR2108 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Number of Drivers	Supplier Device Package	Channel Type	Package / Case	Package / Case	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2108	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-PDIP	Independent	0.3 in	8-DIP	7.62 mm	20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Through Hole	0.8 V 2.9 V	600 V
Infineon Technologies IR2108PBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-PDIP	Independent	0.3 in	8-DIP	7.62 mm	20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Through Hole	0.8 V 2.9 V	600 V
Infineon Technologies IR2108SPBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108STRPBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108STR	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108S	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.62
		10	$ 1.45
		25	$ 1.37
		100	$ 1.13
		250	$ 1.05
		500	$ 0.93
		1000	$ 0.74
	Digi-Reel®	1	$ 1.62
		10	$ 1.45
		25	$ 1.37
		100	$ 1.13
		250	$ 1.05
		500	$ 0.93
		1000	$ 0.74
	Tape & Reel (TR)	2500	$ 0.69
		5000	$ 0.65
		12500	$ 0.63
Newark	Each (Supplied on Cut Tape)	1	$ 1.44
		10	$ 1.05
		25	$ 0.95
		50	$ 0.90
		100	$ 0.84
		250	$ 0.79
		500	$ 0.76
		1000	$ 0.73

Description

General part information

IR2108 Series

600 V Half Bridge Driver IC with typical 0.2 A source and 0.35 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP. For the new version with ourSOI technologywe recommend2ED2108S06F, providing integrated bootstrap diode, better robustness and higher switching frequency

Documents

Technical documentation and resources