IR2108 Series

Catalog

IC GATE DRVR HALF-BRIDGE 8DIP

Part	Operating Temperature [Max]	Operating Temperature [Min]	Gate Type	Number of Drivers	Supplier Device Package	Channel Type	Package / Case	Package / Case	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Driven Configuration	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Mounting Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]
Infineon Technologies IR2108	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-PDIP	Independent	0.3 in	8-DIP	7.62 mm	20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Through Hole	0.8 V 2.9 V	600 V
Infineon Technologies IR2108PBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-PDIP	Independent	0.3 in	8-DIP	7.62 mm	20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Through Hole	0.8 V 2.9 V	600 V
Infineon Technologies IR2108SPBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108STRPBF	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108STR	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in
Infineon Technologies IR2108S	150 °C	-40 °C	IGBT N-Channel MOSFET	2	8-SOIC	Independent		8-SOIC		20 V	10 VDC	Half-Bridge	150 ns	50 ns	Non-Inverting	Surface Mount	0.8 V 2.9 V	600 V	3.9 mm	0.154 in