MASTERGAN4TR
ActiveHIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
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MASTERGAN4TR
ActiveHIGH POWER DENSITY 600V HALF-BRIDGE DRIVER WITH TWO ENHANCEMENT MODE GAN HEMTS
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Technical Specifications
Parameters and characteristics for this part
| Specification | MASTERGAN4TR |
|---|---|
| Applications | General Purpose |
| Current - Output / Channel | 4 A, 6.5 A |
| Current - Peak Output | 16 A, 7 A |
| Fault Protection | Over Temperature, UVLO |
| Features | Bootstrap Circuit |
| Interface | Logic |
| Load Type | Capacitive and Resistive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 31-VQFN Exposed Pad |
| Rds On (Typ) [custom] | 225 mOhm |
| Rds On (Typ) [custom] | 225 mOhm |
| Supplier Device Package | 31-QFN (9x9) |
| Technology | DMOS |
| Voltage - Load [Max] | 600 V |
| Voltage - Supply [Max] | 9.5 V |
| Voltage - Supply [Min] | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
EVLMG4LPWRBR1 Series
The EVLMG4LPWRBR1 is a GaN-based half-bridge power module equipped with MASTERGAN4L, which quickly creates new topologies without needing a complete PCB design.
The module is fine-tuned to work in an LLC application: in fact, the low side resistors are set to zero and two external body diodes are connected in parallel to each half-bridge GaN.
The module can also work in active clamp or resonant peak current mode flyback applications simply by properly adjusting the low side sense resistor and removing the parallel diodes.
Documents
Technical documentation and resources