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EVLMG4LPWRBR1 Series

MASTERGAN4L power module for high efficiency Half-Bridge-GaN-based power supply applications

Manufacturer: STMicroelectronics

Catalog

MASTERGAN4L power module for high efficiency Half-Bridge-GaN-based power supply applications

Key Features

600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
- QFN 9 x 9 x 1 mm package
- RDS(ON)= 225 mΩ
- IDS(MAX)= 6.5 A

Description

AI
The EVLMG4LPWRBR1 is a GaN-based half-bridge power module equipped with MASTERGAN4L, which quickly creates new topologies without needing a complete PCB design. The module is fine-tuned to work in an LLC application: in fact, the low side resistors are set to zero and two external body diodes are connected in parallel to each half-bridge GaN. The module can also work in active clamp or resonant peak current mode flyback applications simply by properly adjusting the low side sense resistor and removing the parallel diodes. Two alternative 6 V linear regulators are embedded in the PCB: a simple low-cost regulator and a more precise temperature-independent one. Due to the external bootstrap diode and capacitor, a proper supply for VCC, PVCC, and Vbo is provided. The module accepts only separate driving signals and the delay time can be modulated by adjusting a dedicated RC filter. The EVLMG4LPWRBR1 is a 30 x 40 mm wide FR-4 PCB, resulting in an Rth(J-A)of 45 °C/W, without forced airflow.