
PMZ390UN,315
UnknownNexperia USA Inc.
MOSFET N-CH 30V 1.78A DFN1006-3

PMZ390UN,315
UnknownNexperia USA Inc.
MOSFET N-CH 30V 1.78A DFN1006-3
Description
General part information
PMZ390 Series
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | PMZ390UN,315 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1.78 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.89 nC |
| Input Capacitance (Ciss) (Max) | 43 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-101, SOT-883 |
| Package Name | SOT-883 |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) | 460 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 950 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Questions about package outline drawings
Using power MOSFETs in parallel
LFPAK MOSFET thermal design guide - Part 2
plastic, leadless ultra small package; 3 terminals; 0.35 mm pitch; 1 mm x 0.6 mm x 0.48 mm body
plastic, leadless ultra small package; 3 terminals; 0.65 mm pitch; 1 mm x 0.6 mm x 0.48 mm body
Understanding power MOSFET data sheet parameters
Reflow soldering profile
RC Thermal Models
Protecting charger interfaces and typical battery charging topologies with external bypass transistors
Understanding power MOSFET data sheet parameters
DFN1006-3; Reel pack for SMD, 7"; Q3/T4 product orientation
Power MOSFET single-shot and repetitive avalanche ruggedness rating
LFPAK MOSFET thermal design guide, Chinese version
Power MOSFET frequently asked questions and answers
Failure signature of Electrical Overstress on Power MOSFETs
Nexperia package poster