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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Technology | Vgs (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Rds On (Max) | Package Name | Current - Continuous Drain (Id) (Tc) | FET Type | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Package / Case | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 30 V | 43 pF | MOSFET (Metal Oxide) | 8 V | 950 mV | 2.5 W | 460 mOhm | SOT-883 | 1.78 A | N-Channel | Surface Mount | -55 °C | 150 °C | 4.5 V | 1.8 V | SC-101 SOT-883 | 0.89 nC | |
 Nexperia USA Inc. | 30 V | 41 pF | MOSFET (Metal Oxide) | 8 V | 950 mV | 5.43 W 350 mW | 470 mOhm | SOT-883 | N-Channel | Surface Mount | -55 °C | 150 °C | 4.5 V | 1.5 V | SC-101 SOT-883 | 1.3 nC | 900 mA |