MMBT5401Q-7-F

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Diodes Inc

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

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Diodes Inc

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	MMBT5401Q-7-F

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	350 mW
Qualification	AEC-Q101
Supplier Device Package	SOT-23-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Qualification	Supplier Device Package	Transistor Type	Grade	Package / Case	Power - Max [Max]
Diodes Inc MMBT5401-7-F	300 MHz	50 nA	600 mA	60 hFE	-55 °C	150 °C	150 V	500 mV	Surface Mount	AEC-Q101	SOT-23-3	PNP	Automotive	SC-59 SOT-23-3 TO-236-3
Diodes Inc MMBT5401Q-7-F	300 MHz	50 nA	600 mA	60 hFE	-55 °C	150 °C	150 V	500 mV	Surface Mount	AEC-Q101	SOT-23-3	PNP	Automotive	SC-59 SOT-23-3 TO-236-3	350 mW

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General part information

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.