MMBT5401Q Series

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Catalog

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Part	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Qualification	Supplier Device Package	Transistor Type	Grade	Package / Case	Power - Max [Max]
Diodes Inc MMBT5401-7-F	300 MHz	50 nA	600 mA	60 hFE	-55 °C	150 °C	150 V	500 mV	Surface Mount	AEC-Q101	SOT-23-3	PNP	Automotive	SC-59 SOT-23-3 TO-236-3
Diodes Inc MMBT5401Q-7-F	300 MHz	50 nA	600 mA	60 hFE	-55 °C	150 °C	150 V	500 mV	Surface Mount	AEC-Q101	SOT-23-3	PNP	Automotive	SC-59 SOT-23-3 TO-236-3	350 mW

Catalog

150V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Key Features

• Epitaxial Planar Die Construction

• Complementary NPN Type - MMBT5551Q

• Ideal for Low Power Amplification and Switching

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The MMBT5401Qissuitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

Description

This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements of automotive applications.