IDW50E60FKSA1

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Infineon Technologies

600 V, 50 A SINGLE EMITTER CONTROLLED SILICON POWER DIODE IN A TO-247 PACKAGE

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Infineon Technologies

600 V, 50 A SINGLE EMITTER CONTROLLED SILICON POWER DIODE IN A TO-247 PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	IDW50E60FKSA1

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	115 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO247-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	2 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Reverse Recovery Time (trr)	Technology	Package / Case
Infineon Technologies IDW50E60FKSA1	-40 °C	175 ░C	600 V	80 A	40 µA	PG-TO247-3	2 V	Through Hole	200 mA 500 ns	115 ns	Standard	TO-247-3

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General part information

The 600 V, 50 A emitter controlledsilicon power diodein a TO-247 package has been primarily designed formotor drive applicationsup to 30kHz.

Technical documentation and resources