600 V, 50 A SINGLE EMITTER CONTROLLED SILICON POWER DIODE IN A TO-247 PACKAGE
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Supplier Device Package | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Speed | Reverse Recovery Time (trr) | Technology | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -40 °C | 175 ░C | 600 V | 80 A | 40 µA | PG-TO247-3 | 2 V | Through Hole | 200 mA 500 ns | 115 ns | Standard | TO-247-3 |