QJD1210SB1

Unknown

Powerex Inc.

SIC 1200V 10A MOD

Search across all available documentation for this part.

Unknown

Powerex Inc.

SIC 1200V 10A MOD

Technical Specifications

Parameters and characteristics for this part

Specification	QJD1210SB1

Technology	Silicon Carbide (SiC)

Part	Technology	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Powerex Inc. QJD1210SB1	Silicon Carbide (SiC)
Powerex Inc. QJD1210SA1	Silicon Carbide (SiC)	2 N-Channel (Dual)	17 mOhm	150 °C	-40 °C	1.6 V	Chassis Mount	8200 pF	Module	Module	100 A	330 nC	520 W	1200 V	1.2 kV
Powerex Inc. QJD1210010	Silicon Carbide (SiC)	2 N-Channel (Dual)	25 mOhm	175 °C	-40 C	5 V	Chassis Mount		Module	Module	100 A		1080 W	1200 V	1.2 kV	10200 pF	500 nC
Powerex Inc. QJD1210SA2	Silicon Carbide (SiC)	2 N-Channel (Dual)	17 mOhm	150 °C	-40 °C	1.6 V	Chassis Mount	8200 pF	Module	Module	100 A	330 nC	415 W	1200 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array

Technical documentation and resources

No documents available