QJD1210SA1

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Powerex Inc.

SIC 2N-CH 1200V 100A MODULE

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Powerex Inc.

SIC 2N-CH 1200V 100A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	QJD1210SA1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs [Max]	330 nC
Input Capacitance (Ciss) (Max) @ Vds	8200 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	520 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	1.6 V

Part	Technology	Configuration	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Powerex Inc. QJD1210SB1	Silicon Carbide (SiC)
Powerex Inc. QJD1210SA1	Silicon Carbide (SiC)	2 N-Channel (Dual)	17 mOhm	150 °C	-40 °C	1.6 V	Chassis Mount	8200 pF	Module	Module	100 A	330 nC	520 W	1200 V	1.2 kV
Powerex Inc. QJD1210010	Silicon Carbide (SiC)	2 N-Channel (Dual)	25 mOhm	175 °C	-40 C	5 V	Chassis Mount		Module	Module	100 A		1080 W	1200 V	1.2 kV	10200 pF	500 nC
Powerex Inc. QJD1210SA2	Silicon Carbide (SiC)	2 N-Channel (Dual)	17 mOhm	150 °C	-40 °C	1.6 V	Chassis Mount	8200 pF	Module	Module	100 A	330 nC	415 W	1200 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1200V (1.2kV) 100A 520W Chassis Mount Module

Technical documentation and resources