LND150N3-G

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Microchip Technology

POWER MOSFET, N CHANNEL, 500 V, 30 MA, 850 OHM, TO-92, THROUGH HOLE

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LND150N3-G

Active

Microchip Technology

POWER MOSFET, N CHANNEL, 500 V, 30 MA, 850 OHM, TO-92, THROUGH HOLE

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Description Specifications Series Pricing CAD Documents

Description

General part information

LND150 Series

The LND150N3-G is a 500V High Voltage N-channel Depletion Mode (normally-on) Transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Technical Specifications

Parameters and characteristics for this part

Specification	LND150N3-G

Current - Continuous Drain (Id) (Tj)	30 mA
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	0 V
FET Feature	Depletion Mode
FET Type	N-Channel, Depletion Mode
Input Capacitance (Ciss) (Max)	10 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Package Name	TO-92-3
Power Dissipation (Max)	740 mW
Rds On (Max)	1000 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

LND150 Series

Part	Package Name	Mounting Type	Technology	Input Capacitance (Ciss) (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Tj)	FET Feature
Microchip Technology LND150N3-G-P003	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150K1-G	SOT-23-3	Surface Mount	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	360 mW	20 V	SC-59 SOT-23-3 TO-236-3	13 mA	Depletion Mode
Microchip Technology LND150N3-G	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P013	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N8-G	SOT-89-3	Surface Mount	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	1.6 W	20 V	TO-243AA	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P002	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P014	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode