LND150 Series

Catalog

N-CHANNEL DEPLETION-MODE DMOS FET

Part	Package Name	Mounting Type	Technology	Input Capacitance (Ciss) (Max)	FET Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Vgs (Max)	Package / Case	Current - Continuous Drain (Id) (Tj)	FET Feature
Microchip Technology LND150N3-G-P003	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150K1-G	SOT-23-3	Surface Mount	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	360 mW	20 V	SC-59 SOT-23-3 TO-236-3	13 mA	Depletion Mode
Microchip Technology LND150N3-G	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P013	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N8-G	SOT-89-3	Surface Mount	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	1.6 W	20 V	TO-243AA	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P002	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode
Microchip Technology LND150N3-G-P014	TO-92-3	Through Hole	MOSFET (Metal Oxide)	10 pF	Depletion Mode N-Channel	500 V	1000 Ohm	-55 °C	150 °C	740 mW	20 V	TO-226-3 TO-92-3 (TO-226AA)	30 mA	Depletion Mode