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STF20N60M2-EP - TO-220FP

STF20N60M2-EP

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STMicroelectronics

N-CHANNEL 600 V, 0.230 OHM TYP., 13 A MDMESH M2 EP POWER MOSFET IN A TO-220FP PACKAGE

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STF20N60M2-EP - TO-220FP

STF20N60M2-EP

Active
STMicroelectronics

N-CHANNEL 600 V, 0.230 OHM TYP., 13 A MDMESH M2 EP POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF20N60M2-EP
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 0.99

Description

General part information

STF20N60M2-EP Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.