Technical Specifications
Parameters and characteristics for this part
| Specification | STF20N60M2-EP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 0.99 | |
Description
General part information
STF20N60M2-EP Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources
Datasheet
DatasheetTN1225
Technical Notes & ArticlesDS11486
Product SpecificationsAN4406
Application Notes (5 of 9)Flyers (5 of 10)
AN4250
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AN5318
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UM1575
User ManualsFlyers (5 of 10)
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AN4829
Application Notes (5 of 9)AN2842
Application Notes (5 of 9)Flyers (5 of 10)
AN4742
Application Notes (5 of 9)TN1224
Technical Notes & ArticlesAN4720
Application Notes (5 of 9)AN2344
Application Notes (5 of 9)Flyers (5 of 10)
TN1156
Technical Notes & ArticlesTN1378
Technical Notes & ArticlesAN4337
Application Notes (5 of 9)Flyers (5 of 10)
