Technical Specifications
Parameters and characteristics for this part
| Specification | STF20N95K5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17.5 A |
| Drain to Source Voltage (Vdss) | 950 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 330 mOhm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
STF20N60M2-EP Series
N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220FP package
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 30 V | 290 mOhm | 5 V | 1300 pF | 45 W | 150 °C | -65 °C | 600 V | TO-220FP | N-Channel | 20 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | ||||
STMicroelectronics | 20 V | 70 mOhm | 4 V | 400 pF | 175 ░C | -55 °C | 60 V | TO-220FP | N-Channel | 20 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | 28 W | 18 nC | |||
STMicroelectronics | 25 V | 4.75 V | 600 V | TO-220FP | N-Channel | 13 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | 22 nC | 150 °C | |||||||
STMicroelectronics | 30 V | 330 mOhm | 5 V | 1600 pF | 150 °C | -55 °C | 950 V | TO-220FP | N-Channel | 18 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | 28 W | 50.7 nC | |||
STMicroelectronics | 30 V | 330 mOhm | 5 V | 1500 pF | 40 W | 150 °C | -55 °C | 950 V | TO-220FP | N-Channel | 17.5 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | 40 nC | |||
STMicroelectronics | 30 V | 270 mOhm | 4.5 V | 2600 pF | 40 W | 500 V | TO-220FP | N-Channel | 17 A | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 10 V | Through Hole | 150 °C | 119 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF20N60M2-EP Series
This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 6)
DS6616
Product SpecificationsAN2842
Application NotesTN1225
Technical Notes & ArticlesUM1575
User ManualsAN4250
Application NotesFlyers (5 of 6)
TN1378
Technical Notes & ArticlesFlyers (5 of 6)
TN1156
Technical Notes & ArticlesTN1224
Technical Notes & ArticlesAN2344
Application NotesFlyers (5 of 6)
AN4337
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
