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STF20N95K5 - STMicroelectronics-STF30N65M5 MOSFETs Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube

STF20N95K5

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STMicroelectronics

N-CHANNEL 950 V, 0.275 OHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

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STF20N95K5 - STMicroelectronics-STF30N65M5 MOSFETs Trans MOSFET N-CH Si 650V 22A 3-Pin(3+Tab) TO-220FP Tube

STF20N95K5

Active
STMicroelectronics

N-CHANNEL 950 V, 0.275 OHM TYP., 17.5 A MDMESH K5 POWER MOSFET IN A TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF20N95K5
Current - Continuous Drain (Id) @ 25°C17.5 A
Drain to Source Voltage (Vdss)950 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1500 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

STF20N60M2-EP Series

N-channel 600 V, 0.230 Ohm typ., 13 A MDmesh M2 EP Power MOSFET in a TO-220FP package

PartVgs (Max)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Operating Temperature [Max]Operating Temperature [Min]Drain to Source Voltage (Vdss)Supplier Device PackageFET TypeCurrent - Continuous Drain (Id) @ 25°CTechnologyPackage / CaseDrive Voltage (Max Rds On, Min Rds On)Mounting TypePower Dissipation (Max) [Max]Gate Charge (Qg) (Max) @ Vgs [Max]Operating TemperatureGate Charge (Qg) (Max) @ Vgs
STMicroelectronics
30 V
290 mOhm
5 V
1300 pF
45 W
150 °C
-65 °C
600 V
TO-220FP
N-Channel
20 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
STMicroelectronics
20 V
70 mOhm
4 V
400 pF
175 ░C
-55 °C
60 V
TO-220FP
N-Channel
20 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
28 W
18 nC
STMicroelectronics
25 V
4.75 V
600 V
TO-220FP
N-Channel
13 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
22 nC
150 °C
STMicroelectronics
30 V
330 mOhm
5 V
1600 pF
150 °C
-55 °C
950 V
TO-220FP
N-Channel
18 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
28 W
50.7 nC
STMicroelectronics
30 V
330 mOhm
5 V
1500 pF
40 W
150 °C
-55 °C
950 V
TO-220FP
N-Channel
17.5 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
40 nC
STMicroelectronics
30 V
270 mOhm
4.5 V
2600 pF
40 W
500 V
TO-220FP
N-Channel
17 A
MOSFET (Metal Oxide)
TO-220-3 Full Pack
10 V
Through Hole
150 °C
119 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1$ 4.70
10$ 3.42
50$ 2.91
100$ 2.90
500$ 2.89
DigikeyTube 1$ 6.13
50$ 4.85
100$ 4.16
500$ 3.70
1000$ 3.17
2000$ 2.98
NewarkEach 1$ 6.18
10$ 5.26
25$ 4.69
50$ 4.55
100$ 4.37

Description

General part information

STF20N60M2-EP Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.