Zenode.ai Logo
Beta
⌘K
Log InSign Up
STB6N60M2 - STMICROELECTRONICS STB11N65M5

STB6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice ENAN5318+25
STB6N60M2 - STMICROELECTRONICS STB11N65M5

STB6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENAN5318+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB6N60M2
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC
Input Capacitance (Ciss) (Max) @ Vds232 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)60 W
Rds On (Max) @ Id, Vgs [Max]1.2 Ohm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.56
10$ 1.27
100$ 0.99
500$ 0.84
Digi-Reel® 1$ 1.56
10$ 1.27
100$ 0.99
500$ 0.84
Tape & Reel (TR) 1000$ 0.68
2000$ 0.64
5000$ 0.61
10000$ 0.59
NewarkEach (Supplied on Cut Tape) 1$ 1.17

Description

General part information

STB6N60M2 Series

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.