STB6N60M2 Series

N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in D2PAK package

Catalog

N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in D2PAK package

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	FET Type
STMicroelectronics STB6N60M2	4 V	60 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	8 nC	1.2 Ohm	232 pF	25 V	600 V	MOSFET (Metal Oxide)	10 V	4.5 A	D2PAK	-55 °C	150 °C	N-Channel

Catalog

N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh M2 Power MOSFET in D2PAK package

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.