DMTH15H053SPSW-13

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Diodes Inc

150V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

150V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH15H053SPSW-13

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	814 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.3 W, 107 W
Rds On (Max) @ Id, Vgs [Max]	66 mOhm
Supplier Device Package	PowerDI5060-8 (Type UX)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

150V +175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Supplier Device Package	Package / Case	Technology
Diodes Inc DMTH15H053SPSW-13	814 pF	10 V	-55 °C	175 ░C	150 V	2.3 W 107 W	25 A	66 mOhm	Surface Mount Wettable Flank	4 V	11.5 nC	20 V	N-Channel	PowerDI5060-8 (Type UX)	8-PowerTDFN	MOSFET (Metal Oxide)

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General part information

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.