DMTH15H053SPSW Series

150V +175°C N-Channel Enhancement Mode MOSFET

Catalog

150V +175°C N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	FET Type	Supplier Device Package	Package / Case	Technology
Diodes Inc DMTH15H053SPSW-13	814 pF	10 V	-55 °C	175 ░C	150 V	2.3 W 107 W	25 A	66 mOhm	Surface Mount Wettable Flank	4 V	11.5 nC	20 V	N-Channel	PowerDI5060-8 (Type UX)	8-PowerTDFN	MOSFET (Metal Oxide)

150V +175°C N-Channel Enhancement Mode MOSFET

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• Low RDS(ON)– Minimizes On-State Losses

• Low Qg– Minimizes Switching Losses

• < 1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

• An automotive-compliant part is available under separate datasheet (DMTH15H053SPSWQ)

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power-management applications.