R6004END3TL1
NRNDRohm Semiconductor
600V 4A TO-252 (DPAK), LOW-NOISE POWER MOSFET
R6004END3TL1
NRNDRohm Semiconductor
600V 4A TO-252 (DPAK), LOW-NOISE POWER MOSFET
Description
General part information
R6004END3 Series
Power MOSFET R6004END3 is suitable for switching power supply.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6004END3TL1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 15 nC |
| Input Capacitance (Ciss) (Max) | 250 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 59 W |
| Rds On (Max) | 980 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
How to Use LTspice® Models
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Package Dimensions
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Precautions When Measuring the Rear of the Package with a Thermocouple
Report of SVHC under REACH Regulation
Method for Monitoring Switching Waveform
Condition of Soldering / Land Pattern Reference
About Export Regulations
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Measurement Method and Usage of Thermal Resistance RthJC
Types and Features of Transistors
Basics of Thermal Resistance and Heat Dissipation
Importance of Probe Calibration When Measuring Power: Deskew
PCB Layout Thermal Design Guide
Reliability Test Result
What is a Thermal Model? (Transistor)
Notes for Temperature Measurement Using Thermocouples
How to Use LTspice® Models: Tips for Improving Convergence
R6004END3 ESD Data
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Impedance Characteristics of Bypass Capacitor
θ<sub>JC</sub> and Ψ<sub>JT</sub>
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Notes for Calculating Power Consumption:Static Operation
TO-252_TL1 Taping Information
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Two-Resistor Model for Thermal Simulation
Temperature derating method for Safe Operating Area (SOA)
Anti-Whisker formation - Transistors
MOSFET Gate Drive Current Setting for Motor Driving
Judgment Criteria of Thermal Evaluation
R6004END3 Data Sheet
Explanation for Marking
Calculation of Power Dissipation in Switching Circuit
MOSFET Gate Resistor Setting for Motor Driving
How to Create Symbols for PSpice Models
What Is Thermal Design
Moisture Sensitivity Level - Transistors
Compliance of the RoHS directive
List of Transistor Package Thermal Resistance
Part Explanation
About Flammability of Materials
θ<sub>JA</sub> and Ψ<sub>JT</sub>