Catalog
600V 4A TO-252 (DPAK), Low-noise Power MOSFET
Description
AI
Power MOSFET R6004END3 is suitable for switching power supply.
600V 4A TO-252 (DPAK), Low-noise Power MOSFET
| Part | Technology | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature | Vgs (Max) | Package / Case | Rds On (Max) | Mounting Type | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Package Name | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Vgs(th) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | MOSFET (Metal Oxide) | 10 V | 150 °C | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 980 mOhm | Surface Mount | 4 A | 15 nC | TO-252 | 600 V | N-Channel | 250 pF | 59 W | 4 V |